MMBT3904-1AM Datasheet

MMBT3904-1AM

Datasheet specifications

Datasheet's name MMBT3904-1AM
File size 88.859 KB
File type pdf
Number of pages 4

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: MDD(Microdiode Electronics) MMBT3904-1AM
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 200mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 300MHz
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA
  • Package: SOT-23
  • Manufacturer: MDD(Microdiode Electronics)

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